Numerical modeling of noise in gallium arsenide semiconductor devices using the Monte Carlo method
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is developed. The model is based on the Shockley-Ramo theorem, which allows the instantaneous current at the terminals of a device to be calculated as a function of time. Once the instantaneous current is fou...
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| Language: | ENG |
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ScholarWorks@UMass Amherst
1991
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| Online Access: | https://scholarworks.umass.edu/dissertations/AAI9120843 |