Epitaxial growth of rare-earth trifluorides on III-V semiconductors
Epitaxial growths of rare-earth trifluorides on III-V semiconductors have been investigated. Synchrotron photoemission spectroscopy showed a complete coverage of III-V substrates by LaF₃ and ErF₃ films and interfacial chemical reactions at the interface. In the LaF₃ films on GaAs(lll) substrates,...
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| Format: | Others |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/2429/9586 |