A systematic study of silicon germanium interdiffusion for next generation semiconductor devices
SiGe heterostructures with higher Ge fractions and larger Ge modulations, and thus higher compressive stress, are key structures for next-generation electronic and optoelectronic devices. Si-Ge interdiffusion during high temperature growth or fabrication steps changes the distribution of Ge fraction...
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| Language: | English |
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University of British Columbia
2014
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| Online Access: | http://hdl.handle.net/2429/47120 |