Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters

Bipolar transistors employing an MIS junction for the emitter exhibit the very desirable properties of high operating frequency and/or high common emitter gains. The topic of this thesis is to investigate the usefulness of the MIS bipolar transistor in real applications. The experimental result...

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Bibliographic Details
Main Author: Szeto, Ngam
Language:English
Published: University of British Columbia 2012
Subjects:
Online Access:http://hdl.handle.net/2429/42013