Electrical properties of thin layers of indium antimonide
This Investigation was undertaken in an effort to compare the electrical properties of thin layers of InSb with those of the bulk material. Layers as thin as 20(µ) were produced using a squashing device. Laue back-reflection showed that the layers were polycrystalline in nature. Measurements of resi...
| Main Author: | |
|---|---|
| Language: | English |
| Published: |
University of British Columbia
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2429/40309 |