Planar GaAs Gunn and field effect devices
Two types of devices, planar Gunn diodes and the negative resistance field effect transistors, have been investigated. Their fabrication, testing and properties are discussed. For the planar diode the Gunn domain velocity is predicted analytically and shown experimentally to decrease with, decreasi...
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| Language: | English |
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University of British Columbia
2011
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| Online Access: | http://hdl.handle.net/2429/32993 |