Parasitic substrate effects in gallium arsenide monolithic MESFETs
The present large scale GaAs integrated circuit industry is based on the fabrication of metalsemiconductor field-effect-transistors (MESFETs) on semi-insulating GaAs substrates which provide the device isolation. High-resistivity in semi-insulating GaAs is achieved by the delicate balance between...
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| Format: | Others |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/2429/3201 |