A GaAs cermet gate charge-coupled device
The design, implementation and evaluation of a 64-pixel, 4-phase GaAs cermet gate charge-coupled device ( CMCCD ) are described. It is demonstrated that the signal charge confinement and the signal charge capacity of the CMCCD are maximized when thin, highly doped active layers are used for implemen...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/29138 |