Self-aligned gallium arsenide MESFETs for microwave integrated circuits
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed and applied to a sample and hold circuit. The process has been shown to reduce the parasitic end resistance of MESFETs which can be a limiting factor in their microwave performance. A mask set was desi...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/28522 |