The behaviour of copper on gallium arsenide
Copper is reported to diffuse at a high rate in GaAs (2.6 x 10⁻⁵ cm² s⁻¹ at 600°C). Dislocations and grain boundaries are expected to be preferential diffusion paths for copper diffusion at low temperatures. The present investigation was undertaken to establish to what extent preferential diffusion...
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| Language: | English |
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University of British Columbia
2010
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| Online Access: | http://hdl.handle.net/2429/27901 |