Characterization of epitaxial semiconductor films by scanning tunneling microscopy at ambient pressure
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are exposed by cleaving and studied by scanning tunneling microscopy (STM) at ambient pressure. The cleaved surfaces are prepared for imaging by wet chemical treatments. GaAs/AlGaAs and Si/SiGe multilaye...
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| Format: | Others |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/2429/2405 |