A self-consistent numerical model for bipolar transport in carbon nanotube field-effect transistors
Carbon nanotube (CNT) field-effect transistors (CNTFETs) utilize a semiconducting CNT channel controlled by an isolated electrostatic gate. The essential physics of these devices is captured in a numerical model that allows calculation of energy band diagrams and currentvoltage (I-V) relationship...
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| Format: | Others |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/15302 |