Etching of Gallium Arsenide with atomic hydrogen
An optical interferometric method is used to make in-situ observations of continuous etching of the (100) GaAs surface during exposure to a known concentration of thermalised hydrogen atoms downstream from an H₂ plasma. Etch rates between 3 and 9 nm/min are followed at constant temperature within th...
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| Format: | Others |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/2429/1357 |