Optical and electrical properties of dilute GaN(x)As(1-x) alloys
The bandgap and optical absorption edge are measured in semi-insulating and p-type GaNAs as a function of nitrogen content using a photoconductivity technique. The bandgap is found to decrease from 1.42 eV with 0% nitrogen to 1.20 eV with 0.9% nitrogen, and to 1.14 eV with 1.73% nitrogen content....
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| Format: | Others |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/2429/12250 |