Investigation on the Interface Treatments for In0.7Ga0.3As NMOS Capacitors and Gate-All-Around Junctionless Field Effect Transistors
碩士 === 國立交通大學 === 電子物理系所 === 108 === For the development of semiconductor industry, the transistors dimension has scaled down to the physical limit. Thus, high electron mobility material, InGaAs, has been widely studied. Nevertheless, the interface quality of InGaAs is a bottleneck for high perfor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7925rw |