Impact of Ferroelectric HfZrOx Gate-Stack Scaling on N-type and P-type Negative Capacitance Transistors
碩士 === 國立交通大學 === 光電系統研究所 === 108 === In recent years, with the flourish of smart phones, Internet of Things (IoT) and other related applications, low-power consumption electronic devices are in urgent need. Tunneling FETs (TFETs) and Negative Capacitances (NCFETs) are been investigated to be differ...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x7vcf2 |