Optoelectronic characteristics study of InGaAs quantum dot solar cell with AlGaAsSb capping layer
碩士 === 元智大學 === 電機工程學系丙組 === 107 === This study investigated the effects of indium gallium arsenide (InGaAs) quantum dots (QDs) covering aluminum gallium arsenide antimony (AlGaAsSb) on the optoelectronic properties of the future solar cells. Since the QD emission wavelength is positively correlated...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2x2mz4 |