Polarization Characteristics and Resistive Switching Mechanism of Molybdenum Oxide Resistive Random Access Memory Devices
碩士 === 國立雲林科技大學 === 電子工程系 === 107 === In this thesis, the polarization characteristics of sol-gel MoO<sub>3</sub> semiconductors have been investigated. The dipoles in the bulk MoO<sub>3</sub> are turned to form a built-in electric field, which is opposite to the applied elec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bxjxjz |