Low-frequency Noise in GaN HEMTs under UV Illumination
碩士 === 國立臺北科技大學 === 電子工程系 === 107 === Gallium Nitride (GaN) materials are suitable for high frequency and, high power, applications, such as 5G communication and, automotive electronics, because of its high electron mobility, high breakdown voltage, wide energy gap. One of the main problems of GaN-b...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/cqtfdu |