Measurement of Structures in Semiconductor Substrates Using Ellipsometry
碩士 === 亞洲大學 === 光電與通訊學系 === 107 === In this paper, the thickness of the oxide layer of silicon on insulator samples was measured using ellipsometry. Because the silicon on insulator samples were highly doped the experimented data were hard to fit using theoretical fitting. In order to understand the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83rbx6 |