An Innovative Structure Using Linear Drift Doping for High Voltage Power SOI LDMOS Device
碩士 === 亞洲大學 === 資訊工程學系 === 107 === The Power SOI stands for: Silicon on Insulator. In this thesis, an Ultra-high voltage triple RESURF lateral double-diffused MOS (LDMOS) in the BCD Integration process is developed and successfully simulated. The proposed triple RESURF LDMOS is able to achieve a Low...
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/cdhfk3 |