| Summary: | 碩士 === 國立虎尾科技大學 === 光電工程系光電與材料科技碩士班 === 107 === This study used the Very High Frequency Plasma Enhanced Chemical Vapor Deposition (VHF-PECVD) with 30 x 30 cm2 large substrate holder and use tetramethylsilane (TMS) as a precursor. The organosilicon plasma polymerization thim films with different process powers (70 W~300 W) were deposited and the influence of the change in process powers on the material properties of the polymeric thin film and the adhesion on the acrylic substrate was analyzed. In addition, the organosilicon plasma polymerization thin films with different thicknesses (250 nm ~ 2000 nm) were deposited at different substrate positions at a power of 250 W, and the uniformity of the organosilicon plasma polymerization thin films under large-area substrates was investigated.
Next, the gas flow rate of tetramethylsilane is fixed. An oxygen gas is introduced to chemically react tetramethylsilane with oxygen to deposited inorganic silicon oxide thin films and the material, surface and mechanical properties of the silicon oxide thin films are analyzed under different oxygen flow rates and process powers. Further, the silicon oxide thin films were deposited on different substrate positions to investigate the uniformity of the thin film under the large-area substrate.
The results show that when the thickness of organosilicon thin films is between 500 nm to 2000 nm, the overall non-uniformity is better under different substrate blocks when the film’s thickness is thicker and observed that organosilicon thin films at different substrate positions have excellent adhesion characteristics. The Silicon oxide has the same characteristics as the organosilicon thin films. When the substrate distance is larger, the overall non-uniformity of the film will be worse, and the silicon oxide films deposited on different substrate positions can’t be completely attached to the acrylic substrate. Therefore, an organosilcion thin film is added between the silicon oxide thin film and acrylic substrate to improve the adhesion. The test found that the adhesion of the silicon oxide/organosilicon structural film was improved to 4B level at different at different substrate positions.
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