Stability and Performance Improvements of a-InZnSnO Thin-Film Transistor with HfO2 Gate Dielectrics by Thermal Annealing
碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === Me tal oxide semiconductor is considered to be the most competitive TFT material for last decade. It has several advantages such as great uniformity for large size display, low fabrication temperature and low production cost. For next gene...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/km66fx |