Preliminary experimental results of integrated GaN-based LED and phototransistor
碩士 === 國立臺灣科技大學 === 電子工程系 === 107 === This paper used commercial GaN LED wafers by using silicon diffusion process. Three components of light-emitting diode, p-i-n structured photodetector and n-p-i-n structured phototransistor on the same wafer. The characteristics of light-emitting diodes are meas...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ednd7j |