Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film
碩士 === 國立臺灣大學 === 機械工程學研究所 === 107 === In this thesis, we use three different substrate temperatures of Magnetron radio frequency sputter(Magnetron RF sputter) for sputtering and three different holding temperatures in the rapid thermal process(RTP) for vacuum annealing to prepare the high dielectr...
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ndltd-TW-107NTU054891642019-11-21T05:34:27Z http://ndltd.ncl.edu.tw/handle/adk5j8 Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film 製程參數對鈦酸鋇薄膜之電特性影響 Chen-Wei Hu 胡承維 碩士 國立臺灣大學 機械工程學研究所 107 In this thesis, we use three different substrate temperatures of Magnetron radio frequency sputter(Magnetron RF sputter) for sputtering and three different holding temperatures in the rapid thermal process(RTP) for vacuum annealing to prepare the high dielectric material-Barium titanate(BTO) thin film and investigate the lattice structure and electrical properties by the X-ray diffraction, I-V curve, C-V curve and P-E loop measurements. According to the X-ray diffraction measurements, when the substrate temperature are 550°C and 650°C with annealing temperatures 600°C and 700°C, there is no peak of BTO in the XRD measurement, the annealing temperature must be above 800°C to get the peaks of BTO. When the substrate temperature is 750°C, we can get the BTO peaks from any annealing temperature and also without annealing, and comparing with all parameters, the BTO peaks of the substrate temperature 750°C with 800°C annealing is most close to the Tetragonal. Combing the I-V, C-V, P-E measurement, when the substrate temperature is 550°C, the BTO thin film shows the large leakage current, when the substrate temperatures are 650°C and 750°C, annealing temperature 800°C showed the less leakage current than the annealing temperature 600°C and 700°C, although they are better in the I-V measurement, their maximum value of capacitance is lower, and we can’t find the ferroelectric in C-V and P-E measurement from all parameters. At last, we sputter 30nm, 60nm, 90nm, 150nm, 225nm of multiferroic material -Barium ferrite(BFO) on the 150nm BTO to build the heterogeneous multilayers structure, and we find that when the thickness of BFO is 150nm, it shows the ferroelectric in the C-V and P-E measurements, and its maximum value of capacitance is higher than others. 廖洺漢 2019 學位論文 ; thesis 61 zh-TW |
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碩士 === 國立臺灣大學 === 機械工程學研究所 === 107 === In this thesis, we use three different substrate temperatures of Magnetron radio frequency sputter(Magnetron RF sputter) for sputtering and three different holding temperatures in the rapid thermal process(RTP) for vacuum annealing to prepare the high dielectric material-Barium titanate(BTO) thin film and investigate the lattice structure and electrical properties by the X-ray diffraction, I-V curve, C-V curve and P-E loop measurements.
According to the X-ray diffraction measurements, when the substrate temperature are 550°C and 650°C with annealing temperatures 600°C and 700°C, there is no peak of BTO in the XRD measurement, the annealing temperature must be above 800°C to get the peaks of BTO. When the substrate temperature is 750°C, we can get the BTO peaks from any annealing temperature and also without annealing, and comparing with all parameters, the BTO peaks of the substrate temperature 750°C with 800°C annealing is most close to the Tetragonal. Combing the I-V, C-V, P-E measurement, when the substrate temperature is 550°C, the BTO thin film shows the large leakage current, when the substrate temperatures are 650°C and 750°C, annealing temperature 800°C showed the less leakage current than the annealing temperature 600°C and 700°C, although they are better in the I-V measurement, their maximum value of capacitance is lower, and we can’t find the ferroelectric in C-V and P-E measurement from all parameters.
At last, we sputter 30nm, 60nm, 90nm, 150nm, 225nm of multiferroic material -Barium ferrite(BFO) on the 150nm BTO to build the heterogeneous multilayers structure, and we find that when the thickness of BFO is 150nm, it shows the ferroelectric in the C-V and P-E measurements, and its maximum value of capacitance is higher than others.
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author2 |
廖洺漢 |
author_facet |
廖洺漢 Chen-Wei Hu 胡承維 |
author |
Chen-Wei Hu 胡承維 |
spellingShingle |
Chen-Wei Hu 胡承維 Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film |
author_sort |
Chen-Wei Hu |
title |
Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film |
title_short |
Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film |
title_full |
Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film |
title_fullStr |
Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film |
title_full_unstemmed |
Effects of Fabrication Parameters on the Electrical Properties of Barium titanate Thin Film |
title_sort |
effects of fabrication parameters on the electrical properties of barium titanate thin film |
publishDate |
2019 |
url |
http://ndltd.ncl.edu.tw/handle/adk5j8 |
work_keys_str_mv |
AT chenweihu effectsoffabricationparametersontheelectricalpropertiesofbariumtitanatethinfilm AT húchéngwéi effectsoffabricationparametersontheelectricalpropertiesofbariumtitanatethinfilm AT chenweihu zhìchéngcānshùduìtàisuānbèibáomózhīdiàntèxìngyǐngxiǎng AT húchéngwéi zhìchéngcānshùduìtàisuānbèibáomózhīdiàntèxìngyǐngxiǎng |
_version_ |
1719294560329269248 |