Effect of Oxide Thickness on The Two-State haracteristics in MIS(p) Tunnel Diode with Ultra-thin Metal Surrounded Gate
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === In this thesis, ultrathin metal surrounded gate Metal-Insulator-Semiconductor (UTMSG MIS) tunnel diodes with various oxide thicknesses were fabricated. The transient two-state characteristics of targeting devices can be magnified. In chapter 2, the electrical c...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/upbe79 |