Studies on the Optoelectronic Properties of WSe2 Thin Film Transistors
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === In this study, high-performance multilayer WSe2 filed-effect transistors were demonstrated by rapid thermal annealing process in oxygen ambient. The experimental results indicate that the field-effect mobility of hole could be enhanced from 1.49 to 31.1 cm^2/Vs...
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93tyk8 |