Investigation and comparison on vertical and planar GeSn photodiode operated in near-infrared
碩士 === 國立臺灣大學 === 電子工程學研究所 === 107 === In recent decades, the GeSn material has been investigated and implied to near-infrared photo-communication due to the following two reasons. Firstly, the band gap of such material can be modulated to extend the detection wavelength by incorporating different c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4h6z8h |