The Design of a Two-bit-per cell One Time Programming Memory with Physical Unclonable Function
碩士 === 國立臺灣師範大學 === 機電工程學系 === 107 === In the history of the development of OTP memory, many existing structures of fuse breakdown devices used a narrow wire of metal or poly-silicide wire. On the other hand, anti-fuse breakdown devices formed an electrically conductive path permanently in the diele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8fpb73 |