Effect of Different Oxygen Flow and Bilayer Gate Insulator on Electrical Performance and Bias Stability of a-IGZO TFTs
碩士 === 國立臺南大學 === 電機工程學系碩博士班 === 107 === The amorphous indium gallium zinc oxide (IGZO) semiconductor has better uniformity due to the amorphous structure. Compared to the traditional using of amorphous silicon, IGZO has the higher mobility, low fabrication temperature, low fabrication cost. However...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ymvu9y |