Characterization study of high power GaN PIN devices grown on sapphire
博士 === 國立清華大學 === 電子工程研究所 === 107 === In this study, MOCVD is used to grow GaN epitaxy layers on conventional sapphire substrate (CSS) and patterned Sapphire Substrate (PSS) of different size. Quasi-vertical GaN PIN diodes are made, edges of devices are protected by the PECVD grown SiO2 layer. After...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h45ju3 |