The Influence of Oxidation on Transport Properties of Few-Layered Indium Selenide Field-Effect Transistor
碩士 === 國立中山大學 === 物理學系研究所 === 107 === Indium selenide (InSe), as one of most promising two-dimensional (2D) layered materials, has attracted tremendous focus recently. It is considered to be an outstanding material for electronic devices because of its high electron mobility and high on/off ratio....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uam5xj |