Degradation of Hot Carrier Stress and Resistance Switching Mechanism for Resistive Random Access Memory Controlled by Transistor

碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 107 === In recent years, the Internet of Things (IOT), big data, and cloud computing have flourished. With the rising demands of high computing speed, low power consumption and large storage capacity, the development of memory is also advancing with the times. Sinc...

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Bibliographic Details
Main Authors: Wan-Hsuan Lin, 林宛萱
Other Authors: Bae-Heng Tseng
Format: Others
Language:zh-TW
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/gx8zqv