Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors

碩士 === 國立東華大學 === 電機工程學系 === 107 === In this paper ,we simulate Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors. First, we simulate different gate-source overlap/underlap structures in a fixed source concentration gradient and observe their...

Full description

Bibliographic Details
Main Authors:	Ching-Ping Cheng, 鄭建平
Other Authors:	Keng-Ming Liu
Format:	Others
Language:	zh-TW
Published:	2019
Online Access:	http://ndltd.ncl.edu.tw/handle/33a256

id	ndltd-TW-107NDHU5442009
record_format	oai_dc
spelling	ndltd-TW-107NDHU54420092019-10-29T05:22:34Z http://ndltd.ncl.edu.tw/handle/33a256 Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors 奈米線穿隧場效電晶體之閘極正交疊/負交疊與源極濃度梯度之模擬 Ching-Ping Cheng 鄭建平碩士國立東華大學電機工程學系 107 In this paper ,we simulate Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors. First, we simulate different gate-source overlap/underlap structures in a fixed source concentration gradient and observe their I-V characteristics. Next, we simulated five different SDGs for each gate-source overlap/underlap structure and observed their device characteristics. The simulation results show that gate-source overlap structure has better device characteristics than gate-source underlap structure, but the device characteristics do not significantly improve with the increase of the overlap length. On the other hand, the SDG has Hardly affected on the device characteristics in the gate-source overlap structure, and the larger the SDG in the gate-source underlap structure, the better the device characteristics. Keng-Ming Liu 劉耿銘 2019 學位論文 ; thesis 93 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立東華大學 === 電機工程學系 === 107 === In this paper ,we simulate Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors. First, we simulate different gate-source overlap/underlap structures in a fixed source concentration gradient and observe their I-V characteristics. Next, we simulated five different SDGs for each gate-source overlap/underlap structure and observed their device characteristics. The simulation results show that gate-source overlap structure has better device characteristics than gate-source underlap structure, but the device characteristics do not significantly improve with the increase of the overlap length. On the other hand, the SDG has Hardly affected on the device characteristics in the gate-source overlap structure, and the larger the SDG in the gate-source underlap structure, the better the device characteristics.
author2	Keng-Ming Liu
author_facet	Keng-Ming Liu Ching-Ping Cheng 鄭建平
author	Ching-Ping Cheng 鄭建平
spellingShingle	Ching-Ping Cheng 鄭建平 Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
author_sort	Ching-Ping Cheng
title	Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
title_short	Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
title_full	Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
title_fullStr	Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
title_full_unstemmed	Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
title_sort	simulation of gate overlap/underlap and source doping gradient of nanowire tunnel field-effect transistors
publishDate	2019
url	http://ndltd.ncl.edu.tw/handle/33a256
work_keys_str_mv	AT chingpingcheng simulationofgateoverlapunderlapandsourcedopinggradientofnanowiretunnelfieldeffecttransistors AT zhèngjiànpíng simulationofgateoverlapunderlapandsourcedopinggradientofnanowiretunnelfieldeffecttransistors AT chingpingcheng nàimǐxiànchuānsuìchǎngxiàodiànjīngtǐzhīzhájízhèngjiāodiéfùjiāodiéyǔyuánjínóngdùtīdùzhīmónǐ AT zhèngjiànpíng nàimǐxiànchuānsuìchǎngxiàodiànjīngtǐzhīzhájízhèngjiāodiéfùjiāodiéyǔyuánjínóngdùtīdùzhīmónǐ
_version_	1719280375985864704

Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors

Similar Items