Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors
碩士 === 國立東華大學 === 電機工程學系 === 107 === In this paper ,we simulate Simulation of gate overlap/underlap and source doping gradient of nanowire Tunnel Field-Effect Transistors. First, we simulate different gate-source overlap/underlap structures in a fixed source concentration gradient and observe their...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33a256 |