Improvement of passivation layer and Characterization of 850 nm Vertically cavity surface-emitting lasers
碩士 === 國立中央大學 === 光電科學與工程學系 === 107 === In this thesis, we use AlGaAs epitaxial wafer to fabricate 10GHz 850nm Vertical Cavity Surface Emitting Laser and increase modulation bandwidth by reducing parasitic capacitance. Reducing parasitic capacitance by isolation and two kind of passivation layers....
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45pb57 |