Development of InGaAs Fin Field-Effect Transistors Selectively Grown on Patterned Ge Template
碩士 === 國立中央大學 === 電機工程學系 === 107 === Nowadays, Si CMOS manufacturing technology has come to 7 nm technology node and approached its physical limit. New materials that offer high carrier mobility and lead to low power consumption are the focus of research in semiconductor field. For example, III-V co...
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| Format: | Others |
| Language: | zh-TW |
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2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/em5ydt |