Deposition of silicate from Si3N4 etching onto SiO2 surfaces in flash memory manufacturing: mass transfer limitation
碩士 === 國立中央大學 === 化學工程與材料工程學系 === 107 === The Si3N4 layers in a 3D NAND flash patterned wafer are generally removed by hot phosphoric acid. However, the abnormal deposition of silicate which is the byproduct from Si3N4 etching onto the neighboring SiO2 layers will cause a serious problem in the foll...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/432znq |