Effects of Nitrogen Plasma Treatment on AP-PECVD Fabricated Mg-Doped InGaZnO Channel Thin Film Transistors

碩士 === 國立交通大學 === 國際半導體產業學院 === 107 === The conventional a-Si thin film transistors (TFTs) have some obviously disadvantages, such as high operation voltage, poor subthreshold swing, threshold voltage and processes temperature issues, and lower field-effect mobility, etc. As the required technology...

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Bibliographic Details
Main Authors: Hung, Jo-Han, 洪若涵
Other Authors: Chang, Kow-Ming
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/nm56ep