| Summary: | 碩士 === 國立交通大學 === 國際半導體產業學院 === 107 === With multiple outstanding material properties such as wide band gap, high electron mobility, high breakdown field, GaN has been widely used in in industry for high power applications. GaN is used to fabricate high electron mobility transistor, which is a D-mode device. One way to achieve E-mode operation is to add p-GaN layer above the AlGaN layer, which we called p-GaN HEMT. And for p-GaN HEMT, one main problem is its gate leakage current. In this study, the use of Metal-Oxide-Semiconductor structure is to solve the problem of gate leakage current and increase the threshold voltage.
This study will start from introducing the process flow of p-GaN HEMT, p-GaN MOS-HEMT, and MOS capacitor. Next, we will explain why and which kind of oxide we had selected. Then, we will introduce some possible process flow and our process flow selection, explaining why we choose self-aligned etching process. After that, we successfully fabricated p-GaN MOS-HEMT with low gate leakage current and high threshold voltage. The comparison between p-GaN HEMT and p-GaN MOS-HEMT is also included. Finally, the oxide quality was identified by C-V measurement.
This study proved that MOS structure is suitable for p-GaN HEMT device and can effectively suppress the gate leakage current and increase the threshold voltage.
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