Study of p-GaN MOS-HEMT by Self-Aligned Etching for High Power Applications
碩士 === 國立交通大學 === 國際半導體產業學院 === 107 === With multiple outstanding material properties such as wide band gap, high electron mobility, high breakdown field, GaN has been widely used in in industry for high power applications. GaN is used to fabricate high electron mobility transistor, which is a D-mod...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jjr8jh |