Transformation of highly (111)-oriented nanotwinned Cu films to (200)- or (211)-oriented films at 400oC annealing using Ta and Co adhesion layers
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 107 === In back-end-of-line (BEOL) metallization, TaN/ Ta has been widely used for Cu interconnect barrier layer to prevent Cu atoms from penetrating into porous low-k materials. As the continuous scaling in microelectronic devices to 28nm and beyond, Cu interco...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4nfqc6 |