Evaluation of Gate Reliability on Charge-trapping Gate Stack In E-mode GaN MIS-HEMT
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 107 === E-mode GaN MIS-HEMT was evaluated by PBTI and TDDB. First, gate recessed E-mode GaN MIS-HEMT is a common device structure for gate is reduced by etching process, reduces the resulting in the low concentration of Two-Dimensional Electron Gas (2DEG) undern...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/qx8dgx |