Study of the Device Properties of AlGaN/GaN HEMTs on Si substrate with Different Carbon-doped Buffer Structures
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 107 === In this paper, we present for the impact of the carbon doping concentration and epitaxial layer thickness with AlGaN/GaN buffer layer dynamic properties .The dynamic analysis of the different GaN:C buffer layers showed that the high carbon doping levels...
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Format: | Others |
Language: | en_US |
Published: |
2018
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Online Access: | http://ndltd.ncl.edu.tw/handle/vn6b77 |
Summary: | 碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 107 === In this paper, we present for the impact of the carbon doping concentration and epitaxial layer thickness with AlGaN/GaN buffer layer dynamic properties .The dynamic analysis of the different GaN:C buffer layers showed that the high carbon doping levels Through extrinsic technique offers a less dispersive buffer when compared with the low carbon incorporation .In addition, we increase the breakdown voltage by adjusting the thickness of carbon doped GaN buffer layer. The results show that the breakdown voltage is improved a lot and relatively low vertical leakage current by increasing the thickness of carbon doped GaN buffer layer. Also found an interesting phenomenon between vertical leakage current and dynamic on-resistance (RON), they have a positive correlation. Get better material quality by optimizing the buffer layer while generating reliable devices for high power applications.
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