Study of the Device Properties of AlGaN/GaN HEMTs on Si substrate with Different Carbon-doped Buffer Structures
碩士 === 國立交通大學 === 工學院半導體材料與製程設備學程 === 107 === In this paper, we present for the impact of the carbon doping concentration and epitaxial layer thickness with AlGaN/GaN buffer layer dynamic properties .The dynamic analysis of the different GaN:C buffer layers showed that the high carbon doping levels...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vn6b77 |