Reduction of Metal to Metal Crack by Optimization of Dielectric Deposition Processes

• Main Authors: Chen, Tsung-MING, 陳宗銘
• Other Authors: Zhao, Tian-Sheng
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/u2dp8u

碩士 === 國立交通大學 === 理學院應用科技學程 === 107 === In this work we report increase in the thickness of the metal layer for passivation crack issue, which resulted from the crack issue between the metal and the metal due to the stress mismatch between the tensile stress and the compressive stress of the film. First, we chose the way to find affecting process and range by experiment design methods. We found that power and O2 were reducing to intense compressive stress .It was found that the flow and power of O2 were reduced, and the compressive internal stress of the film was reduced. This phenomenon can greatly reduce the tensile stress caused by the increase of the thickness of the metal and the decomposition rate decreases when the power is insufficient. This phenomenon can reduce the tensile stress caused by the increase in metal thickness. When the power is under-power, the decomposition rate decreases and the direct deposition of a large amount of incompletely oxidized SiHn radicals leads to an increasing in the Si-H bond concentration of the yttrium oxide film, which is successfully adjusted by a proper annealing step and process. It has a very low film internal stress to reduce and the product has no metal layer cracks. In the conclusion, we will plan the direction that can be improved in the future, use the different influences on the oxide film to study crack the metal layer and use the defect detector to find the optimal conditions to make the metal layer complete.