Transient Thermal Characteristics Study and Automatic Thermal Resistance Measurement System Design for Package-level Power Semiconductor Device
碩士 === 國立交通大學 === 機械工程系所 === 107 === Compared with the traditional silicon-based power devices, AlGaN / GaN power transistors have high electron mobility and high breakdown voltage, also GaN is a wide band-gap (WBG) semiconductor material. It’s suitable for high power and high frequency operation. H...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k562mj |