Investigating Mechanical Behaviors of Fan-Out Panel Level Packaging Structures during De-bonding

• Main Authors: Ling, Fang-Yu, 林枋萭
• Other Authors: Tsai, Jia-Lin
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/k8528y

碩士 === 國立交通大學 === 機械工程系所 === 107 === This research aims to investigate the mechanical behaviors of a Fan-Out Panel Level Packaging (FOPLP) display during the fabrication process using finite element analysis. The fabrication process includes the thermal cycling process and the de-bonding process of FOPLP display. By understanding the stress and strain distribution with FOPLP display, the degree of damage or failure for the FOPLP display during fabrication process can be reduced. In order to understand the mechanical de-bonding process, a simplified FOPLP two-dimensional finite element model was established. By adopting the technique of global model and local model simulation, the stress states within FOPLP display can be calculated. In addition, the thermal stress generated was also taken into account in the simulation. By adjusting the geometry and material properties, the stress state with the FOPLP can be reduced, which is helpful in the development of FOPLP. In addition, the warpage deduced during the thermal cycling process together with the delamination was investigated in the study. Since the thermal warpage is a three-dimensional problem, a three-dimensional finite element model was introduced and the total energy release rate of the defect at the onset of delamination was calculated by using bi-material fracture mechanics. Moreover, the consideration of laser assistance de-bonding technology after the thermal cycle process and the modification of mechanical model of Epoxy Molding Compound (EMC) make the simulation results more complete. The simulation technique established in previous section was extended to investigate the mechanical behaviors of FOPLP with Thin-Film Transistor (TFT) embedded underneath the Die. The TFT-FOPLP structure was examined through global-local simulation, and the stress and strain states of TFT after thermal cycling were calculated. The information will be employed to understand the electrical behavior of channel during the fabrication process.