Flyback converter design based on GaN switching and Thermal stress analysis of power device
碩士 === 國立交通大學 === 機械工程系所 === 107 === The GaN bandgap is about 3 times larger than that of Si, making it possible to endure high voltage tolerance. But also with the work in high temperature, high thermal conductivity and high electron mobility and other characteristics, so the use of Casecode GaN(a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wqhtrr |