Three-dimensional Drift-Diffusion Simulation and its Application to the Study of the Reliability of High-k MOSFETs
博士 === 國立交通大學 === 電信工程研究所 === 107 === In the present thesis, by using an in-house three-dimensional (3-D) simulator with advanced physical modeling, we study the reliability issues regarding nanoscale electron devices with various high-k dielectrics. Extra emphasis is placed on the simulation of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2b3p8k |